P-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes

A. V. Sampath, Q. G. Zhou, R. W. Enck, D. McIntosh, H. Shen, J. C. Campbell, M. Wraback
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4748793