Effects of surface micromesas on reverse leakage current in InGaN/GaN Schottky barriers

Wei Lu, Tomoaki Nishimura, Lingquan (Dennis) Wang, Tohru Nakamura, Paul K. L. Yu, Peter M. Asbeck
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4748317
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