Determination of carrier concentration by Fano interference of Raman scattering in heavily doped n-type 4H-SiC

Takeshi Mitani, Shin-ichi Nakashima, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4748279