As-grown deep-level defects in n-GaN grown by metal–organic chemical vapor deposition on freestanding GaN

Shang Chen, Unhi Honda, Tatsunari Shibata, Toshiya Matsumura, Yutaka Tokuda, Kenji Ishikawa, Masaru Hori, Hiroyuki Ueda, Tsutomu Uesugi, Tetsu Kachi
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4748170
The author haven't finished explaining this publicationThe author haven't finished explaining this publication
The following have contributed to this page: Dr Kenji Ishikawa