Study of strain fields caused by crystallization of boron doped amorphous silicon using scanning transmission electron microscopy convergent beam electron diffraction method

Nobuto Nakanishi, Hiroyuki Arie, Yorinobu Kunimune, Takashi Ide, Yukinori Hirose, Nobuyoshi Hattori, Toru Koyama
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4747838
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