Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes

  • Ray-Ming Lin, Sheng-Fu Yu, Shoou-Jinn Chang, Tsung-Hsun Chiang, Sheng-Po Chang, Chang-Ho Chen
  • Applied Physics Letters, August 2012, American Institute of Physics
  • DOI: 10.1063/1.4747802

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http://dx.doi.org/10.1063/1.4747802

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