On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks

I. Z. Mitrovic, S. Hall, N. Sedghi, G. Simutis, V. R. Dhanak, P. Bailey, T. C. Q. Noakes, I. Alexandrou, O. Engstrom, J. M. J. Lopes, J. Schubert
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4746790