Role of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metal-oxide-semiconductor capacitor

Souvik Kundu, Nripendra N. Halder, D. Biswas, P. Banerji, T. Shripathi, S. Chakraborty
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4745896
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