Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration

Chang-Ki Baek, Sooyoung Park, Myung-Dong Ko, Taiuk Rim, Seongwook Choi, Yoon-Ha Jeong
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4745858
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