Energy states and carrier transport processes in metamorphic InAs quantum dots

L. Seravalli, G. Trevisi, P. Frigeri, R. J. Royce, D. J. Mowbray
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4744981

Wetting layer in metamorphic quantum dots

Why is it important?

This study evidences that wetting layer states are absent in metamorphic InAs/InGaAs structures. This a result of great interest as these structures are strong candidates for the development of single photon sources in the 1.3 - 1.55 µm range

The following have contributed to this page: Dr Luca Seravalli