Investigation of polysilsesquioxane as a gate dielectric material for organic field-effect transistors

M. Kawamura, Yoshio Nakahara, Mitsuhiro Ohse, Maki Kumei, K. Uno, Hidefumi Sakamoto, Keiichi Kimura, Ichiro Tanaka
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4742891
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