Universal mechanism for ion-induced nanostructure formation on III-V compound semiconductor surfaces

  • M. Kang, J. H. Wu, S. Huang, M. V. Warren, Y. Jiang, E. A. Robb, R. S. Goldman
  • Applied Physics Letters, August 2012, American Institute of Physics
  • DOI: 10.1063/1.4742863

The authors haven't yet claimed this publication.

Read Publication

http://dx.doi.org/10.1063/1.4742863

In partnership with:

Link to American Institute of Physics showcase