Exact control of junction position using epitaxial NiSi2 crystallization in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors

W. Mizubayashi, S. Migita, Y. Morita, H. Ota
  • AIP Advances, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4740467
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