Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio

  • K. W. Park, C. Y. Park, Y. T. Lee
  • Applied Physics Letters, July 2012, American Institute of Physics
  • DOI: 10.1063/1.4739835

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http://dx.doi.org/10.1063/1.4739835

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