Low-temperature fabrication of solution-processed InZnO thin-film transistors with Si impurities by UV∕O3-assisted annealing

Li Lu, Masahiro Echizen, Takashi Nishida, Yasuaki Ishikawa, Kiyoshi Uchiyama, Yukiharu Uraoka
  • AIP Advances, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4739052
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