Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks

  • M. A. Pawlak, J. Swerts, M. Popovici, B. Kaczer, M.-S. Kim, W.-C. Wang, K. Tomida, B. Govoreanu, J. Delmotte, V. V. Afanas’ev, M. Schaekers, W. Vandervorst, J. A. Kittl
  • Applied Physics Letters, July 2012, American Institute of Physics
  • DOI: 10.1063/1.4737871

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