On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

P. Toniutti, P. Palestri, D. Esseni, F. Driussi, M. De Michielis, L. Selmi
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4737781
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