Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

W. He, S. L. Lu, D. S. Jiang, J. R. Dong, A. Tackeuchi, H. Yang
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4737611