Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Y. Zhu, N. Jain, S. Vijayaraghavan, D. K. Mohata, S. Datta, D. Lubyshev, J. M. Fastenau, W. K. Liu, N. Monsegue, M. K. Hudait
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4737462
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