Characterization of vacancy-type defects in heteroepitaxial GaN grown by low-energy plasma-enhanced vapor phase epitaxy

A. Calloni, R. Ferragut, A. Dupasquier, H. von Känel, A. Guiller, A. Rutz, L. Ravelli, W. Egger
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4737402