Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry

Keiko Kouda, Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi, Sadafumi Yoshida
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4736801
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