An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes

Jiaxing Wang, Lai Wang, Lei Wang, Zhibiao Hao, Yi Luo, Anja Dempewolf, Mathias Müller, Frank Bertram, Jürgen Christen
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4736591
The author haven't yet claimed this publicationThe author haven't yet claimed this publication