Investigation of deep-level defects in conductive polymer on n-type 4H- and 6H-silicon carbide substrates using I-V and deep level transient spectroscopy techniques

J. F. Felix, M. Aziz, D. L. da Cunha, K. F. Seidel, I. A. Hümmelgen, W. M. de Azevedo, E. F. da Silva, D. Taylor, M. Henini
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4733569
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