Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells

T. J. Badcock, R. Hao, M. A. Moram, M. J. Kappers, P. Dawson, R. A. Oliver, C. J. Humphreys
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4731730