Plasmon enhanced resonant defect absorption in thin a-Si:H n-i-p devices

  • F. Lükermann, U. Heinzmann, H. Stiebig
  • Applied Physics Letters, June 2012, American Institute of Physics
  • DOI: 10.1063/1.4730432

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http://dx.doi.org/10.1063/1.4730432

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