Does the low hole transport mass in 〈110〉 and 〈111〉 Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study

R. Kotlyar, T. D. Linton, R. Rios, M. D. Giles, S. M. Cea, K. J. Kuhn, Michael Povolotskyi, Tillmann Kubis, Gerhard Klimeck
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4729806
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