Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

  • Pradipta K. Nayak, J. A. Caraveo-Frescas, Unnat. S. Bhansali, H. N. Alshareef
  • Applied Physics Letters, June 2012, American Institute of Physics
  • DOI: 10.1063/1.4729787

The authors haven't yet claimed this publication.

Read Publication

http://dx.doi.org/10.1063/1.4729787

In partnership with: