Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette di Forte-Poisson, Jean-Claude De Jaeger, Abdallah Ougazzaden
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4729154
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