Strain control of AlGaN/GaN high electron mobility transistor structures on silicon (111) by plasma assisted molecular beam epitaxy

Rolf Aidam, Elke Diwo, Nicola Rollbühler, Lutz Kirste, Fouad Benkhelifa
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4729045