Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy

S. Fritze, P. Drechsel, P. Stauss, P. Rode, T. Markurt, T. Schulz, M. Albrecht, J. Bläsing, A. Dadgar, A. Krost
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4729044
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The following have contributed to this page: Armin Dadgar