Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications

JunShuai Xue, JinCheng Zhang, Kai Zhang, Yi Zhao, LinXia Zhang, XiaoHua Ma, XiaoGang Li, FanNa Meng, Yue Hao
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4729030
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