Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon

J. D. Murphy, K. Bothe, R. Krain, V. V. Voronkov, R. J. Falster
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4725475
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