Threshold voltage shift and drain current degradation by negative bias temperature instability in Si (110) p-channel metal-oxide-semiconductor field-effect transistor

  • K. Ota, M. Saitoh, Y. Nakabayashi, T. Ishihara, K. Uchida, T. Numata
  • Applied Physics Letters, May 2012, American Institute of Physics
  • DOI: 10.1063/1.4722796

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http://dx.doi.org/10.1063/1.4722796

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