Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN∕AlGaN∕GaN metal-insulator-semiconductor heterostructure field-effect transistors

Joseph J. Freedsman, Toshiharu Kubo, Takashi Egawa
  • AIP Advances, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4722642