Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

G. W. Paterson, S. J. Bentley, M. C. Holland, I. G. Thayne, J. Ahn, R. D. Long, P. C. McIntyre, A. R. Long
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4720940