Publisher’s Note: “Impact of active layer design on InGaN radiative recombination coefficient and LED performance” [J. Appl. Phys. 111, 063112 (2012)]

X. Li, S. Okur, F. Zhang, V. Avrutin, Ü. Özgür, H. Morkoç, S. M. Hong, S. H. Yen, T. C. Hsu, A. Matulionis
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4718913