Effects of substrate strain and electrical stress on lattice dynamics, defects, and traps in strained-Si/Si0.81Ge0.19 n-type metal-oxide-semiconductor field effect transistors

C. Mukherjee, S. Sengupta, C. K. Maiti, T. K. Maiti
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4718015
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