Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

S. F. Chichibu, K. Hazu, Y. Ishikawa, M. Tashiro, H. Namita, S. Nagao, K. Fujito, A. Uedono
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4717955
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