Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes with multiplication layers made of InP, InAlAs, and GaAs

Denis Dolgos, Hektor Meier, Andreas Schenk, Bernd Witzigmann
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4717729
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