The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extraction

M.-H. Liao, C.-H. Chen, L.-C. Chang, C. Yang, S.-C. Kao
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4714558
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