Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

D. W. Cardwell, A. R. Arehart, C. Poblenz, Y. Pei, J. S. Speck, U. K. Mishra, S. A. Ringel, J. P. Pelz
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4714536