Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

  • D. W. Cardwell, A. R. Arehart, C. Poblenz, Y. Pei, J. S. Speck, U. K. Mishra, S. A. Ringel, J. P. Pelz
  • Applied Physics Letters, May 2012, American Institute of Physics
  • DOI: 10.1063/1.4714536

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