Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors

  • D. R. Gajula, D. W. McNeill, B. E. Coss, H. Dong, S. Jandhyala, J. Kim, R. M. Wallace, B. M. Armstrong
  • Applied Physics Letters, May 2012, American Institute of Physics
  • DOI: 10.1063/1.4712564

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http://dx.doi.org/10.1063/1.4712564

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