Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

B. C. Johnson, B. J. Villis, J. E. Burgess, N. Stavrias, J. C. McCallum, S. Charnvanichborikarn, J. Wong-Leung, C. Jagadish, J. S. Williams
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4710991
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