Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers

D. H. Kim, D. K. Kim, J. U. Cho, S. Y. Park, S. Isogami, M. Tsunoda, M. Takahashi, E. E. Fullerton, Y. K. Kim
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4709738