Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer

W. Wang, K. K. Leung, W. K. Fong, S. F. Wang, Y. Y. Hui, S. P. Lau, Z. Chen, L. J. Shi, C. B. Cao, C. Surya
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4709732