Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface

G. Dingemans, F. Einsele, W. Beyer, M. C. M. van de Sanden, W. M. M. Kessels
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4709729