Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS

W. Mtangi, F. D. Auret, W. E. Meyer, M. J. Legodi, P. J. Janse van Rensburg, S. M. M. Coelho, M. Diale, J. M. Nel
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4709728
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