GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure

A. Beyer, J. Ohlmann, S. Liebich, H. Heim, G. Witte, W. Stolz, K. Volz
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4706573
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