Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain evolution and phase separation

M. Korytov, J. A. Budagosky, J. Brault, T. Huault, M. Benaissa, T. Neisius, J.-L. Rouvière, P. Vennéguès
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4704682