Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

T. Schenkel, C. D. Weis, C. C. Lo, V. Lang, A. M. Tyryshkin, R. E. George, K. M. Yu, J. Bokor, S. A. Lyon, J. J. L. Morton
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4704561
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